Paper Titles

930, 170Ω.cm² Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
p.1413

4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs
p.1417

Fabrication of 4H-SiC Double-Epitaxial MOSFETs
p.1421

Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N₂O)
p.1425

High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N₂O Ambient
p.1429

Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
p.1433

Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
p.1437

Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs
p.1441

SiC JMOSFETs for High-Temperature Stable Circuit Operation
p.1445

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460High Channel Mobilities of MOSFETs on Highly-Doped...

High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N₂O Ambient

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1429-1432

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1429

Citation:

Cite this paper

Online since:

June 2004

Authors:

Y. Kanzaki, H. Kinbara, Hajime Kosugi, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

(11-20), Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS, N₂O Oxidation, Short-Channel

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das and J.W. Palmour: IEEE Electron Device Lett., Vol. 22 (2001), p.176.

DOI: 10.1109/55.915604

[2] L.A. Lipkin, M.K. Das and J.W. Palmour: Mater. Sci. Forum Vols. 389-393 (2002), p.985.

[3] H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara: IEEE Electron Device Lett., Vol. 20 (1999), p.611.

DOI: 10.1109/55.806101

[4] J. Senzaki, K. Kojima, S. Harada, R. Kosugi, S. Suzuki, T. Suzuki and K. Fukuda: IEEE Electron Device Lett., Vol. 23 (2002), p.13.

DOI: 10.1109/55.974797

[5] R. Schörner, P. Friedrichs and D. Peters: IEEE Trans. Electron Devices, Vol. 46 (1999), p.533.