High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1429-1432

DOI:

10.4028/www.scientific.net/MSF.457-460.1429

Citation:

Y. Kanzaki et al., "High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient ", Materials Science Forum, Vols. 457-460, pp. 1429-1432, 2004

Online since:

June 2004

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