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4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs
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Fabrication of 4H-SiC Double-Epitaxial MOSFETs
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Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N₂O)
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-4604H-SiC MOSFETs on C(000-,1) Face with Inversion...

4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1417-1420

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1417

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Online since:

June 2004

Authors:

Kenji Fukuda, Makoto Kato, Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki

Keywords:

Carbon Face, Interface States (or Traps), Inversion Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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