4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1417-1420

DOI:

10.4028/www.scientific.net/MSF.457-460.1417

Citation:

K. Fukuda et al., "4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs", Materials Science Forum, Vols. 457-460, pp. 1417-1420, 2004

Online since:

June 2004

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Price:

$35.00

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