Paper Titles

4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
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930, 170Ω.cm² Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
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4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs
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Fabrication of 4H-SiC Double-Epitaxial MOSFETs
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Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N₂O)
p.1425

High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N₂O Ambient
p.1429

Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
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Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
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Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Enhancement of Inversion Channel Mobility in...

Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N₂O)

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1425-1428

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1425

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Online since:

June 2004

Authors:

G. Gudjónsson, H.Ö. Ólafsson, E.Ö. Sveinbjörnsson

Keywords:

Channel Mobility, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Nitrous Oxide

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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