Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1425-1428

DOI:

10.4028/www.scientific.net/MSF.457-460.1425

Citation:

G. Gudjónsson et al., "Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)", Materials Science Forum, Vols. 457-460, pp. 1425-1428, 2004

Online since:

June 2004

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