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HomeMaterials Science ForumMaterials Science Forum Vols. 457-4604H-SiC MOSFETs with a Novel Channel Structure...

4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1409-1412

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1409

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Online since:

June 2004

Authors:

J. Kaido, Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami

Keywords:

Effective Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), N₂O Oxidation, SiC MOSFET, Threshold Voltage

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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