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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Fabrication of Double Implanted (0001) 4H-SiC...

Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1397-1400

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1397

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Online since:

June 2004

Authors:

Ryouji Kosugi, Norihiko Kiritani, Kenji Suzuki, Tsutomu Yatsuo, Kazuhiro Adachi, Kenji Fukuda

Keywords:

Breakdown Voltage, Channel Mobility, DIMOSFET, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS, Oxidation, Pyrogenic Oxidation, Re-Oxidation, R_ons, Specific On-Resistance

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[30] [25] [20] [15] [10] [5] [0] Field effect channel mobility [cm 2/Vs] 2520151050 Gate voltage [V] (a) (b).

[50] [40] [30] [20] 10Field effect channel mobility [cm.

[2] /Vs] 30025020015010050 Temperature [ºC].

[10] [8] [6] [4] [2] Threshold voltage [V] 5x10-5.

[4] [3] [2] [1] [0] Current [A] 1500 1000 500.

Blocking voltage [V] (a) (b) (c) (d), (e).