Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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1397-1400

Citation:

R. Kosugi et al., "Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing", Materials Science Forum, Vols. 457-460, pp. 1397-1400, 2004

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June 2004

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[30] [25] [20] [15] [10] [5] [0] Field effect channel mobility [cm 2/Vs] 2520151050 Gate voltage [V] (a) (b).

[50] [40] [30] [20] 10Field effect channel mobility [cm.

[2] /Vs] 30025020015010050 Temperature [ºC].

[10] [8] [6] [4] [2] Threshold voltage [V] 5x10-5.

[4] [3] [2] [1] [0] Current [A] 1500 1000 500.

Blocking voltage [V] (a) (b) (c) (d), (e).

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