Paper Title:
Development of 10 kV 4H-SiC Power DMOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1385-1388
DOI
10.4028/www.scientific.net/MSF.457-460.1385
Citation
S. H. Ryu, A. K. Agarwal, S. Krishnaswami, J. Richmond, J. W. Palmour, "Development of 10 kV 4H-SiC Power DMOSFETs", Materials Science Forum, Vols. 457-460, pp. 1385-1388, 2004
Online since
June 2004
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