Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1369-1372

DOI:

10.4028/www.scientific.net/MSF.457-460.1369

Citation:

T. Seyller et al., "Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition", Materials Science Forum, Vols. 457-460, pp. 1369-1372, 2004

Online since:

June 2004

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$35.00

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