Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition

Thomas Seyller; Kun Yuan Gao; Lothar Ley; Gerhard Pensl; Florin Ciobanu; A. Tadich; J.D. Riley; R.C.G. Leckey

doi:10.4028/www.scientific.net/MSF.457-460.1369

Paper Titles

Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
p.1353

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation
p.1357

Electronic Properties of SiON/HfO₂ Insulating Stacks on 4H-SiC (0001)
p.1361

Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
p.1365

Structural and Electronic Properties of the 6H-SiC(0001)/Al₂O₃ Interface Prepared by Atomic Layer Deposition
p.1369

Development of Sol-Gel MgO Thin Films for SiC Insulation Applications
p.1373

Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination
p.1377

Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
p.1381

Development of 10 kV 4H-SiC Power DMOSFETs
p.1385

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Structural and Electronic Properties of the...

Structural and Electronic Properties of the 6H-SiC(0001)/Al₂O₃ Interface Prepared by Atomic Layer Deposition

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1369-1372

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1369

Citation:

Cite this paper

Online since:

June 2004

Authors:

Thomas Seyller, Kun Yuan Gao, Lothar Ley, Gerhard Pensl, Florin Ciobanu, A. Tadich, J.D. Riley, R.C.G. Leckey

Keywords:

Al₂O₃, Atomic Layer Chemical Vapor Deposition, Gate Dielectric, Interface States (or Traps)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] V. V. Afanas'ev, et al., Phys. Stat. Sol. (a) Vol. 162 (1997), pp.321-337.

Google Scholar

[2] H. Yano, et al., IEEE Electron Device Lett. Vol. 20 (1999), p.611.

Google Scholar

[3] H. Yano, et al., Mater. Sci. Forum Vol. 338-342 (2000), pp.1005-1008.

Google Scholar

[4] R. Schörner, et al., IEEE Electron Device Lett. Vol. 20 (1999), p.

Google Scholar

[5] H. Yano, et al., Mater. Sci. Forum Vol. 338-342 (2000), pp.1109-1112.

Google Scholar

[6] H. F. Li, et al., Applied Physics Letters Vol. 70 (1997), p.2028-(2030).

Google Scholar

[7] H. F. Li, et al., Ieee Electron Device Letters Vol. 19 (1998), pp.279-281.

Google Scholar

[8] H. F. Li, et al., Mater. Sci. Forum Vol. 264-268 (1998), pp.869-872.

Google Scholar

[9] H. F. Li, et al., Journal of Electronic Materials Vol. 29 (2000), pp.1027-1032.

Google Scholar

[10] G. Y. Chung, et al., Appl. Phys. Lett. Vol. 76 (2000), p.1713.

Google Scholar

[11] N. Sieber, et al., Mater. Sci. Forum Vol. 389-393 (2002), pp.717-720.

Google Scholar

[12] N. Sieber, et al., Mater. Sci. Forum Vol. 353-356 (2001), pp.223-226.

Google Scholar

[13] N. Sieber, et al., Appl. Phys. Lett. Vol. 78 (2001), pp.1216-1218.

Google Scholar

[14] U. Starke, et al., J. Vac. Sci. Technol. A Vol. 17 (1999), p.1688.

Google Scholar

[15] A. W. Ott, et al., Thin Solid Films Vol. 292 (1997), pp.135-144.

Google Scholar

[16] S. Miyazaki, et al., Applied Surface Science Vol. 114 (1997), pp.585-589.

Google Scholar

[17] V. V. Afanas'ev, et al., Mater. Sci. Forum Vol. 389-393 (2002), pp.961-966.

Google Scholar