Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC

K.Y. Cheong; Sima Dimitrijev; Ji Sheng Han

doi:10.4028/www.scientific.net/MSF.457-460.1365

Paper Titles

Thermal Oxidation of 4H-Silicon Using the Afterglow Method
p.1349

Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
p.1353

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation
p.1357

Electronic Properties of SiON/HfO₂ Insulating Stacks on 4H-SiC (0001)
p.1361

Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
p.1365

Structural and Electronic Properties of the 6H-SiC(0001)/Al₂O₃ Interface Prepared by Atomic Layer Deposition
p.1369

Development of Sol-Gel MgO Thin Films for SiC Insulation Applications
p.1373

Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination
p.1377

Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
p.1381

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Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC

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Materials Science Forum (Volumes 457-460)

Pages:

1365-1368

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1365

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Online since:

June 2004

Authors:

K.Y. Cheong, Sima Dimitrijev, Ji Sheng Han

Keywords:

Capacitance Transient, Effective Generation Rate, Minority Carrier Lifetime, Nitrided Gate Oxide, Non-Volatile Memory (NVM), Surface Generation Velocity

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References

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