Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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1365-1368

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K.Y. Cheong et al., "Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC", Materials Science Forum, Vols. 457-460, pp. 1365-1368, 2004

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June 2004

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