Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1365-1368

DOI:

10.4028/www.scientific.net/MSF.457-460.1365

Citation:

K.Y. Cheong et al., "Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC", Materials Science Forum, Vols. 457-460, pp. 1365-1368, 2004

Online since:

June 2004

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$35.00

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