Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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1381-1384

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M. Laube et al., "Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect ", Materials Science Forum, Vols. 457-460, pp. 1381-1384, 2004

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June 2004

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[1] V. V. Afanas'ev, M. Bassler, G. Pensl, A. Stesmans, Mater. Sci. Forum Vol. 389-393 (2002), p.961.

[2] N. S. Saks, A. K. Agarwal, Appl. Phys. Lett. Vol. 77 (2000), p.3281.

[3] G. Rutsch, R. P. Devaty, W. J. Choyke, D. W. Langer, L. B. Rowland, J. Appl. Phys. Vol. 84 (1998), p. (2062).

[4] E. Arnold, IEEE Trans. Electron. Dev. Vol. ED-46 (1999), p.497.

[5] E. Arnold, D. Alok, IEEE Trans. Electron. Dev. Vol. ED-48 (2001), p.1870.

[6] S. C. Sun, J. D. Plummer, IEEE Trans. Electron. Dev. Vol. ED-27 (1980), p.1497.

[7] H. Iwata, K. M. Itoh, J. Appl. Phys. Vol. 89 (2001), p.6228.

[8] D. J. Ryden, J. Phys. C: Solid State Phys. Vol. 7 (1974), p.2655.

[9] B. I. Shklovskii, Sov. Phys. JETP Vol. 45 (1977).