Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect

Michael Laube; Gerhard Pensl; Kin Kiong Lee; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.457-460.1381

Paper Titles

Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
p.1365

Structural and Electronic Properties of the 6H-SiC(0001)/Al₂O₃ Interface Prepared by Atomic Layer Deposition
p.1369

Development of Sol-Gel MgO Thin Films for SiC Insulation Applications
p.1373

Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination
p.1377

Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
p.1381

Development of 10 kV 4H-SiC Power DMOSFETs
p.1385

Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFET
p.1389

Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiC
p.1393

Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing
p.1397

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Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect

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Materials Science Forum (Volumes 457-460)

Pages:

1381-1384

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1381

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Online since:

June 2004

Authors:

Michael Laube, Gerhard Pensl, Kin Kiong Lee, Takeshi Ohshima

Keywords:

6H-SiC MOSFET, Hall-Effect, Inversion, Percolation

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