Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1381-1384

DOI:

10.4028/www.scientific.net/MSF.457-460.1381

Citation:

M. Laube et al., "Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect ", Materials Science Forum, Vols. 457-460, pp. 1381-1384, 2004

Online since:

June 2004

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$35.00

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