For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N2O
p.1329
Radical Nitridation of Ultra-Thin SiO2/SiC Structure
p.1333
Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC
p.1337
Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation
p.1341
Diluted Nitric Oxide (NO) Annealing of SiO2/4H-SiC in Cold-Wall Oxidation Furnace
p.1345
Thermal Oxidation of 4H-Silicon Using the Afterglow Method
p.1349
Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
p.1353
Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation
p.1357
Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)
p.1361

Diluted Nitric Oxide (NO) Annealing of SiO2/4H-SiC in Cold-Wall Oxidation Furnace

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2003 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1345-1348

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1345

Citation:

Cite this paper

Online since:

June 2004

Authors:

Ryouji Kosugi, Kenji Fukuda

Keywords:

Channel Mobility, Dit, Hot-Carrier, Interface Trapped Density, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS, Nitric Oxide (NO), NO, Oxidation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.