Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation

Yasuto Hijikata; Hiroyuki Yaguchi; Yuuki Ishida; Masahito Yoshikawa; Toshio Kamiya; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.457-460.1341

Paper Titles

Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron Radiation
p.1325

A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N₂O
p.1329

Radical Nitridation of Ultra-Thin SiO₂/SiC Structure
p.1333

Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC
p.1337

Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation
p.1341

Diluted Nitric Oxide (NO) Annealing of SiO₂/4H-SiC in Cold-Wall Oxidation Furnace
p.1345

Thermal Oxidation of 4H-Silicon Using the Afterglow Method
p.1349

Fast Oxidation of 4H-SiC at Room Temperature by Electrochemical Methods
p.1353

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation
p.1357

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Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1341-1344

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1341

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Online since:

June 2004

Authors:

Yasuto Hijikata, Hiroyuki Yaguchi, Yuuki Ishida, Masahito Yoshikawa, Toshio Kamiya, Sadafumi Yoshida

Keywords:

Ar Post-Oxidation Annealing, Band Lineup, Bonding, Capacitance to Voltage Measurement, Oxide Interface, Photoelectron Spectroscopy, Pyrogenic Oxidation, SiC Interface

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