Paper Titles

A Comparison between SiO₂/4H-SiC Interface Traps on (0001) and (11-20) Faces
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Interface Properties of 4H-SiC/SiO₂ with MOS Capacitors and FETs Annealed in O₂, N₂O, NO and CO₂
p.1309

Initial Oxidation of 6H-SiC (0001) (3 x 3)-R30° and 3 x 3 Surfaces Studied by AES and RHEED
p.1313

Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy
p.1317

Oxidation Studies of Non-Polar 4H-SiC Surfaces
p.1321

Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron Radiation
p.1325

A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N₂O
p.1329

Radical Nitridation of Ultra-Thin SiO₂/SiC Structure
p.1333

Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC
p.1337

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Oxidation Studies of Non-Polar 4H-SiC Surfaces

Oxidation Studies of Non-Polar 4H-SiC Surfaces

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1321-1324

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1321

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Online since:

June 2004

Authors:

Charíya Virojanadara, Leif I. Johansson

Keywords:

Non-Polar, Oxidation, Photoemission, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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