Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1309-1312

DOI:

10.4028/www.scientific.net/MSF.457-460.1309

Citation:

W. Wang et al., "Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2", Materials Science Forum, Vols. 457-460, pp. 1309-1312, 2004

Online since:

June 2004

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