Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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1309-1312

Citation:

W. Wang et al., "Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2", Materials Science Forum, Vols. 457-460, pp. 1309-1312, 2004

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June 2004

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[5] [10] [15] [20] [25] 0 10 20 30 Gate Voltage (V) Field-Effect Mobility (cm.

[2] /V. s) NO CO2 Dry O2 (a) (b).

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