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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Interface Properties of 4H-SiC/SiO2 with MOS...

Interface Properties of 4H-SiC/SiO₂ with MOS Capacitors and FETs Annealed in O₂, N₂O, NO and CO₂

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1309-1312

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1309

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Online since:

June 2004

Authors:

W. Wang, S. Banerjee, T. Paul Chow, Ronald J. Gutmann, Tamara Isaacs-Smith, John R. Williams, Kenneth A. Jones, Aivars J. Lelis, W. Tipton, Skip Scozzie, Anant K. Agarwal

Keywords:

4H-SiC, Anneal, Field-Effect Mobility, Hall Measurements, Interface States (or Traps)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[5] [10] [15] [20] [25] 0 10 20 30 Gate Voltage (V) Field-Effect Mobility (cm.

[2] /V. s) NO CO2 Dry O2 (a) (b).