Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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1297-1300

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T. Ohnuma et al., "Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters ", Materials Science Forum, Vols. 457-460, pp. 1297-1300, 2004

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June 2004

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