Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1297-1300

DOI:

10.4028/www.scientific.net/MSF.457-460.1297

Citation:

T. Ohnuma et al., "Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters ", Materials Science Forum, Vols. 457-460, pp. 1297-1300, 2004

Online since:

June 2004

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$35.00

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