Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters

Toshiharu Ohnuma; Hidekazu Tsuchida; Tamotsu Jikimoto

doi:10.4028/www.scientific.net/MSF.457-460.1297

Paper Titles

Recent Advances in (0001) 4H-SiC MOS Device Technology
p.1275

Characterizations of SiC/SiO₂ Interface Quality Toward High Power MOSFETs Realization
p.1281

Hall Effect Measurements in SiC Buried-Channel MOS Devices
p.1287

First-Principles Study of O Adsorption at SiC Surface
p.1293

Interface States in Abrupt SiO₂/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
p.1297

Investigation of SiO₂/SiC Interface using Positron Annihilation Technique
p.1301

A Comparison between SiO₂/4H-SiC Interface Traps on (0001) and (11-20) Faces
p.1305

Interface Properties of 4H-SiC/SiO₂ with MOS Capacitors and FETs Annealed in O₂, N₂O, NO and CO₂
p.1309

Initial Oxidation of 6H-SiC (0001) (3 x 3)-R30° and 3 x 3 Surfaces Studied by AES and RHEED
p.1313

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Interface States in Abrupt SiO₂/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters

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Materials Science Forum (Volumes 457-460)

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1297-1300

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.1297

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Online since:

June 2004

Authors:

Toshiharu Ohnuma, Hidekazu Tsuchida, Tamotsu Jikimoto

Keywords:

First-Principle Calculations, Interface States (or Traps), SiO₂/SiC Interface

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References

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