Investigation of SiO2/SiC Interface using Positron Annihilation Technique

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1301-1304

Citation:

M. Maekawa et al., "Investigation of SiO2/SiC Interface using Positron Annihilation Technique", Materials Science Forum, Vols. 457-460, pp. 1301-1304, 2004

Online since:

June 2004

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