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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Investigation of SiO2/SiC Interface using Positron...

Investigation of SiO₂/SiC Interface using Positron Annihilation Technique

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1301-1304

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1301

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Online since:

June 2004

Authors:

Masaki Maekawa, Atsuo Kawasuso, Masahito Yoshikawa, Ayahiko Ichimiya

Keywords:

Doppler-Shift, MOS Structure, Open-Volume Defect, Positron Beam, SiO₂/SiC Interface

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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