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Interface States in Abrupt SiO₂/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
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Investigation of SiO₂/SiC Interface using Positron Annihilation Technique
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A Comparison between SiO₂/4H-SiC Interface Traps on (0001) and (11-20) Faces
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Interface Properties of 4H-SiC/SiO₂ with MOS Capacitors and FETs Annealed in O₂, N₂O, NO and CO₂
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Initial Oxidation of 6H-SiC (0001) (3 x 3)-R30° and 3 x 3 Surfaces Studied by AES and RHEED
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Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy
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Oxidation Studies of Non-Polar 4H-SiC Surfaces
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Carbon-Terminated 3C-SiC(100) Surface Oxidation Studied by High-Resolution Core Level Photoemission Spectroscopy using Synchrotron Radiation
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A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N₂O
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Initial Oxidation of 6H-SiC (0001) (3 x 3)-R30°...

Initial Oxidation of 6H-SiC (0001) (3 x 3)-R30° and 3 x 3 Surfaces Studied by AES and RHEED

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1313-1316

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1313

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Online since:

June 2004

Authors:

Tomohiro Aoyama, W. Voegeli, Ayahiko Ichimiya, Yoshiyuki Hisada, Shinichi Mukainakano

Keywords:

AES, Characterization, Initial Oxidation, RHEED, Silicon Carbide (SiC), Surface

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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