Paper Titles

The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices
p.1233

Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC
p.1237

Edge Termination Technique for SiC Power Devices
p.1241

BIFET – a Novel Bipolar SiC Switch for High Voltage Power Electronics
p.1245

A Review of SiC Power Switch: Achievements, Difficulties and Perspectives
p.1249

A Highly Effective Edge Termination Design for SiC Planar High Power Devices
p.1253

Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC
p.1257

The SiC-SiO₂ Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material
p.1263

A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
p.1269

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460A Review of SiC Power Switch: Achievements,...

A Review of SiC Power Switch: Achievements, Difficulties and Perspectives

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1249-1252

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1249

Citation:

Cite this paper

Online since:

June 2004

Authors:

Igor Sankin, J. Neil Merrett, W.A. Draper, Janna R. B. Casady, Jeff B. Casady

Keywords:

Bipolar Junction Transistor (BJT), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), SiC Power Switch, VJFET

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] R. Singh: Mat. Res. Soc. Symp. Proc. Vol. 640, p. H4. 2. 1.

[2] S. -H. Ryu, A.K. Agarwal, R. Singh and J.W. Palmour: IEEE Electron Device Letters, Vol. 22, No. 3, March 2001, p.127.

[3] H. -R. Chang, E. Hanna and A.V. Radun: Proceedings of ISPSD 2003, April 14-17, p.131.

[4] Y. Sugawara, D. Takayama, K. Asano, S. Ryu, A. Miyauchi, S. Ogata and T. Hayashi: Proceedings of ISPSD 2003, April 14-17, p.127.

[5] P. Friedrichs, H. Mitlehner, R. Schörner, K. -O. Dohnke, R. Elpelt and D. Stephani: Mater. Sci. Forum Vol. 389-393 (2002), p.1185.

DOI: 10.4028/www.scientific.net/msf.389-393.1185

[6] A.K. Agarwal, S. -H. Ryu, J. Richmond, C. Cappel, J.W. Palmour, Y. Tang, S. Balachandran, and T.P. Chow: Proceedings of ISPSD 2003, April 14-17, p.135.

[7] I. A. Khan, J. A. Cooper, Jr., M.A. Capano, T. Isaacs-Smith and J. R. Williams: Proceedings of ISPSD 2002, June 4-7, p.157.

[8] S. Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks and J. Williams: IEEE Electron Device Letters, 23 (6), 321-323 (2002).

DOI: 10.1109/led.2002.1004222

[9] D. Peters, R. Schörner, P. Friedrichs and D. Stephani: Mat. Sci. Forum Vols. 433-436 (2003) p.769.

[10] Y. Tang, T.P. Chow: Proceedings of ISPSD 2003, April 14-17, p.383.

[11] Y. Tang, S. Banerjee and T.P. Chow: Proceedings of ISPSD 2002, June 4-7, p.53.