The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1233-1236

Citation:

K. Adachi et al., "The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices ", Materials Science Forum, Vols. 457-460, pp. 1233-1236, 2004

Online since:

June 2004

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001 0. 01 0. 1 1 10 Chip area, A [cm 2] Power loss [W ] SiC Pon SiC Pi SiC Po SiC Pt Si Pon Si Pi Si Po Si Pt SiC Si.

DOI: https://doi.org/10.1016/s1473-8325(02)01028-3

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1 1 10 100 10 100 1000 10000 Vbr [V] Total power loss [W ] SiC 100kHz SiC 1M Hz SiC 10M Hz Si 100kHz Si 1M Hz Si 10M Hz Fig. 1Fig. 1Fig. 1Fig. 1 Total power loss vs. Vbr in SiC and Si at 6A with various frequency (300K) FigFigFigFig. 3. 3. 3. 3 Power loss ratio SiC/Si vs. Vbr at 1MHz (300K) Fig. 5Fig. 5Fig. 5Fig. 5 Power loss vs. chip area in SiC and Si at 600V 6A 1MHz (300K) Fig. 2Fig. 2Fig. 2Fig. 2 Total power loss vs. Vbr with parameter of SiC µch and Rsub (300K) Fig. 4Fig. 4Fig. 4Fig. 4 RonQo vs. Vbr with parameter of SiC µch and Rsub (300K).

DOI: https://doi.org/10.4028/www.scientific.net/msf.645-648.1101

1 1 10 100 10 100 1000 10000 Vbr [V] T otal pow er loss [W ] μch=100cm 2/Vs Rsub=0. 5m Ωcm 2 μch=100cm 2/Vs Rsub=0. 1m Ωcm 2 μch=500cm 2/Vs Rsub=0. 1m Ωcm 2 SiC Si 0.

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9 1 10 100 1000 10000 Vbr [V] T otal pow er loss ratio of S iC /S i μch=100cm 2/Vs Rsub=0. 5m Ωcm 2 μch=100cm 2/Vs Rsub=0. 1m Ωcm 2 μch=500cm 2/Vs Rsub=0. 1m Ωcm 2.

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[1] E-07 10 100 1000 10000 Vbr [V] R onQ [ΩC ] μch=100cm 2/Vs Rsub=0. 5Ωcm 2 μch=100cm 2/Vs Rsub=0. 1Ωcm 2 μch=500cm 2/Vs Rsub=0. 1Ωcm 2 SiC Si.

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