Edge Termination Technique for SiC Power Devices

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1241-1244

Citation:

H. W. Kim et al., "Edge Termination Technique for SiC Power Devices", Materials Science Forum, Vols. 457-460, pp. 1241-1244, 2004

Online since:

June 2004

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[1] M. Bhatnagar and B. J. Baliga, IEEE Trans. Electron Devices, vol. 40 (1993) p.645.

[2] R. J. Trew, H. B. Yan, and P. M. Mock, Proc. IEEE, vol. 79 (1991) p.598.

[3] Silvaco TCAD Manuals, Atlas, Silvaco International, Co. USA.

[4] B. J. Baliga, Power silicon devices, (1995) p.81 Fig. 5. Measured breakdown voltage of 4H-SiC power diode with two rings.

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