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DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
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Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications
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The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices
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Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC
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Edge Termination Technique for SiC Power Devices
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BIFET – a Novel Bipolar SiC Switch for High Voltage Power Electronics
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A Review of SiC Power Switch: Achievements, Difficulties and Perspectives
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A Highly Effective Edge Termination Design for SiC Planar High Power Devices
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Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Edge Termination Technique for SiC Power Devices

Edge Termination Technique for SiC Power Devices

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1241-1244

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1241

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Online since:

June 2004

Authors:

Hyoung Wook Kim, Wook Bahng, Geun Ho Song, Sang Cheol Kim, Nam Kyun Kim, Eun Dong Kim

Keywords:

Edge Termination, Field Limiting Ring, Field Plate, Junction Termination Extension (JTE), Power Device

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] M. Bhatnagar and B. J. Baliga, IEEE Trans. Electron Devices, vol. 40 (1993) p.645.

[2] R. J. Trew, H. B. Yan, and P. M. Mock, Proc. IEEE, vol. 79 (1991) p.598.

[3] Silvaco TCAD Manuals, Atlas, Silvaco International, Co. USA.

[4] B. J. Baliga, Power silicon devices, (1995) p.81 Fig. 5. Measured breakdown voltage of 4H-SiC power diode with two rings.