Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1257-1262

Citation:

X. Wang and J. A. Cooper, "Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 1257-1262, 2004

Online since:

June 2004

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$38.00

[1] V. A. K. Temple: IEDM Tech. Dig, (1977) p.423.

[2] A. Konstantinov, et al. : Appl. Phys. Lett. 71 (1997) p.90.

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