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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Optimization of JTE Edge Terminations for 10 kV...

Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1257-1262

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1257

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Online since:

June 2004

Authors:

X. Wang, James A. Cooper

Keywords:

Blocking Voltage, Edge Termination, Silicon Carbide (SiC), Triple-Zone JTE

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] V. A. K. Temple: IEDM Tech. Dig, (1977) p.423.

[2] A. Konstantinov, et al. : Appl. Phys. Lett. 71 (1997) p.90.