Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1201-1204

DOI:

10.4028/www.scientific.net/MSF.457-460.1201

Citation:

P. Friedrichs et al., "Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch ", Materials Science Forum, Vols. 457-460, pp. 1201-1204, 2004

Online since:

June 2004

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$35.00

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