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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Optimization of Vertical Silicon Carbide Field...

Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1201-1204

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1201

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Online since:

June 2004

Authors:

Peter Friedrichs, Rudolf Elpelt, Reinhold Schörner, Heinz Mitlehner, Dietrich Stephani

Keywords:

Incomplete Ionization, Saturation Current, SiC VJFET, Temperature Dependence

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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