Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1201-1204

Citation:

P. Friedrichs et al., "Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch ", Materials Science Forum, Vols. 457-460, pp. 1201-1204, 2004

Online since:

June 2004

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.