600V 4H-SiC RESURF-Type JFET

Kazuhiro Fujikawa; Shinsuke Harada; Atsuo Ito; Tsunenobu Kimoto; Hiroyuki Matsunami

doi:10.4028/www.scientific.net/MSF.457-460.1189

Paper Titles

A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
p.1173

Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
p.1177

Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
p.1181

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
p.1185

600V 4H-SiC RESURF-Type JFET
p.1189

Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
p.1193

Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
p.1197

Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch
p.1201

RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates
p.1205

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460600V 4H-SiC RESURF-Type JFET

600V 4H-SiC RESURF-Type JFET

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1189-1192

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1189

Citation:

Cite this paper

Online since:

June 2004

Authors:

Kazuhiro Fujikawa, Shinsuke Harada, Atsuo Ito, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Double RESURF Structure, Junction Field Effect Transistor (JFET)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T. Fujihira: Jpn. J. Appl. Phys. Vol. 36 (1997), pp.6254-6262.

Google Scholar

[2] A. O. Konstantinov, et al.: J. Electron. Mater. Vol. 27 (1998), p.335.

Google Scholar

[3] H. Matsunami and T. Kimoto: Mater. Sci. & Eng. Vol. R20 (1997), p.125.

Google Scholar

[4] P. Friedrichs, et al.: Materials Science Forum Vols. 389-393 (2002), pp.1185-1190.

Google Scholar

[5] J. H. Zhao, et al.: Materials Science Forum Vols. 389-393 (2002), pp.1223-1226.

Google Scholar

[6] S. Ryu, et al.: Materials Science Forum Vols. 389-393 (2002), pp.1195-1198.

Google Scholar

[7] M. Imaizumi, et al.: Materials Science Forum Vols. 389-393 (2002), pp.1203-1206.

Google Scholar