Paper Titles

4,340V, 40 mΩcm² Normally-Off 4H-SiC VJFET
p.1161

A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor
p.1165

A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at V_Bus=900V
p.1169

A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
p.1173

Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
p.1177

Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
p.1181

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
p.1185

600V 4H-SiC RESURF-Type JFET
p.1189

Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
p.1193

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Effect of Passivation on Device Stability and Gate...

Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1177-1180

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1177

Citation:

Cite this paper

Online since:

June 2004

Authors:

Alexandre Kerlain, Erwan Morvan, Christian Dua, N. Caillas, Christian Brylinski

Keywords:

MESFET, Passivation, Surface Instability

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] U.K. Mishra, P. Parikh, and Y-F Wu, Proc. IEEE 90 (june 2002), p.1022.

[2] R.C. Clark, and J.W. Palmour, Proc. IEEE 90 (june 2002), p.987.

[3] M.G. Walden, M. Knight, IEEE EDMO Conference (2002).

[4] A.K. Agarwal, S. Seshadri, and L.B. Rowland, IEEE Electron Device Lett., 18 (1997) , p.592.

[5] V.V. Afanas'ev, F. Ciobanu, G. Pensl, and A. Stesmans, chapter 14 of Recent Progress in Silicon Carbide, ed. by W.J. Choyke, H. Matsunami, and G. Pensl. to be published, Springer Verlag.

[6] R. Vetury, N.Q. Zhang, S. Keller, and K. Mishra, IEEE Trans. Electron Devices, 48 (2001) , p.560.

[7] G. Koley, V. Tilak, L.F. Eastman, and M.G. Spencer, IEEE Trans. Electron Devices, 50 (2003) , p.886.

[8] K.P. Hilton et Al, Mat. Sci. Forum 338-342 (2000), p.1251. ICSCRM (1999).

[9] H.Y. Cha et Al, Mat. Sci. Forum 433-436 (2003), p.749.

[10] H-C. Chiu, M-J. Hwu, S-C. Yang, Y-J. Chan, IEEE Electron Device Lett., 23 (2002) , p.243.

[11] H.Y. Cha et Al, IEEE Electron Device Lett., 24 (2003) , p.571.

[12] P.C. Chao, M. Shur, M.Y. Kao, and B.R. Lee, , IEEE Trans. Electron Devices, 39 (1992) , p.738.

[13] S. Berberich et Al, Mat. Sci. Forum 264-268 (1998), p.881.

[14] H.Y. Cha et Al, IEEE Trans. Electron Devices, 50 (2003) , p.1569.

[15] N. Sghaier, et Al, IEEE Trans. Electron Devices, 50 (2003) , p.297.

[16] A.P. Zhang et Al, J. Elec. Mat. 32 (2003), p.437.

[17] H. Kim et Al, IEEE Electron Device Lett., 24 (2003) , p.421.