Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1181-1184

DOI:

10.4028/www.scientific.net/MSF.457-460.1181

Citation:

H. J. Na et al., "Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation ", Materials Science Forum, Vols. 457-460, pp. 1181-1184, 2004

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June 2004

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[5] [10] [15] [20] 0. 1 1 10 Frequency (GHz) Frequency (GHz) Frequency (GHz) Frequency (GHz) Gain (dB) Gain (dB)Gain (dB)Gain (dB) current gain unilateral gain MSG MAG Fig. 5. High-voltage operation property of the fabricated MESFET. Fig. 6. RF characteristics of MESFETs at Vd = 80 V and Vg = 1. 0 V.

DOI: 10.1109/vlsic.1989.1037501

[5] [10] [15] [20] [25] [30] 0 50 100 Vd (V)Vd (V)Vd (V)Vd (V) Id (mA/mm) Id (mA/mm) Id (mA/mm) Id (mA/mm) Vg=1V 0V.

DOI: 10.3403/30090231

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