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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Fabrication and Characterization of 4H-SiC Planar...

Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1181-1184

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1181

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Online since:

June 2004

Authors:

Hoon Joo Na, Dae Hwan Kim, Sang Yong Jung, In Bok Song, Myung Yoon Um, Ho Keun Song, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim

Keywords:

Activation Annealing, Ion Implantation, MESFET, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[5] [10] [15] [20] 0. 1 1 10 Frequency (GHz) Frequency (GHz) Frequency (GHz) Frequency (GHz) Gain (dB) Gain (dB)Gain (dB)Gain (dB) current gain unilateral gain MSG MAG Fig. 5. High-voltage operation property of the fabricated MESFET. Fig. 6. RF characteristics of MESFETs at Vd = 80 V and Vg = 1. 0 V.

DOI: 10.1109/iscas45731.2020.9180400/video

[5] [10] [15] [20] [25] [30] 0 50 100 Vd (V)Vd (V)Vd (V)Vd (V) Id (mA/mm) Id (mA/mm) Id (mA/mm) Id (mA/mm) Vg=1V 0V.

DOI: 10.3403/30090231u