A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1173-1176

DOI:

10.4028/www.scientific.net/MSF.457-460.1173

Citation:

J. H. Zhao et al., "A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer ", Materials Science Forum, Vols. 457-460, pp. 1173-1176, 2004

Online since:

June 2004

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