Paper Titles

1,530V, 17.5mΩcm² Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization
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4,340V, 40 mΩcm² Normally-Off 4H-SiC VJFET
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A 500V, Very High Current Gain (β=1517) 4H-SiC Bipolar Darlington Transistor
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A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at V_Bus=900V
p.1169

A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
p.1173

Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
p.1177

Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
p.1181

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
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600V 4H-SiC RESURF-Type JFET
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460A High Voltage (1,750V) and High Current Gain...

A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1173-1176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1173

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Online since:

June 2004

Authors:

Jian Hui Zhao, Jian Hui Zhang, Peter Alexandrov, Larry X. Li, Terry Burke

Keywords:

Bipolar Junction Transistor (BJT), Power Transistor, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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