1,530V, 17.5mΩcm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1157-1160

DOI:

10.4028/www.scientific.net/MSF.457-460.1157

Citation:

L. Fursin et al., "1,530V, 17.5mΩcm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization ", Materials Science Forum, Vols. 457-460, pp. 1157-1160, 2004

Online since:

June 2004

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$35.00

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