Paper Title:
Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1113-1116
DOI
10.4028/www.scientific.net/MSF.457-460.1113
Citation
J. J. Sumakeris, M. K. Das, H. McD. Hobgood, S. G. Müller, M. J. Paisley, S. Y. Ha, M. Skowronski, J. W. Palmour, C. H. Carter Jr., "Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices", Materials Science Forum, Vols. 457-460, pp. 1113-1116, 2004
Online since
June 2004
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Koji Nakayama, Yoshitaka Sugawara, R. Ishii, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura
Abstract:Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC...
1359
Authors: Yuan Bu, Hiroyuki Yoshimoto, Kumiko Konishi, Akio Shima, Yasuhiro Shimamoto
5.1: Rectifying Devices
Abstract:We designed, fabricated and evaluated 6.5 kV SiC PiN diodes. In order to suppress process-induced basal plane dislocation (BPD) in SiC PiN...
435