Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

Joseph J. Sumakeris; Mrinal K. Das; H. McD. Hobgood; Stephan G. Müller; Michael J. Paisley; Seoyong Ha; Marek Skowronski; John W. Palmour; Calvin H. Carter Jr.

doi:10.4028/www.scientific.net/MSF.457-460.1113

Paper Titles

2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes
p.1097

Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes
p.1101

High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
p.1105

4,308V, 20.9 mΩ-cm² 4H-SiC MPS Diodes Based on a 30μm Drift Layer
p.1109

Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
p.1113

Extrinsic Base Design of SiC Bipolar Transistors
p.1117

Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm² Power Density Handling Ability
p.1121

Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors
p.1125

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor
p.1129

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Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1113-1116

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1113

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Online since:

June 2004

Authors:

Joseph J. Sumakeris, Mrinal K. Das, H. McD. Hobgood, Stephan G. Müller, Michael J. Paisley, Seoyong Ha, Marek Skowronski, John W. Palmour, Calvin H. Carter Jr.

Keywords:

Basal Plane Dislocation (BPD), Stacking Fault, V_f Drift

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References

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