Bulk SiC Devices for High Radiation Environments
p.1093
p.1093
2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes
p.1097
p.1097
Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes
p.1101
p.1101
High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
p.1105
p.1105
4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer
p.1109
p.1109
Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
p.1113
p.1113
Extrinsic Base Design of SiC Bipolar Transistors
p.1117
p.1117
Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability
p.1121
p.1121
Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors
p.1125
p.1125
4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer
Abstract:
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
1109-1112
Citation:
Online since:
June 2004
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© 2004 Trans Tech Publications Ltd. All Rights Reserved
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