4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1109-1112

DOI:

10.4028/www.scientific.net/MSF.457-460.1109

Citation:

J. Wu et al., "4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer", Materials Science Forum, Vols. 457-460, pp. 1109-1112, 2004

Online since:

June 2004

Export:

Price:

$38.00

In order to see related information, you need to Login.