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Paper Titles
Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements
p.993
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
p.997
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
p.1001
P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching
p.1005
Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
p.1009
Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring
p.1013
Current Transport Mechanisms in 4H-SiC PiN Diodes
p.1017
On-Chip Temperature Monitoring of a SiC Current Limiter
p.1021
The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
p.1025

Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1009-1012

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1009

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Online since:

June 2004

Authors:

Yasunori Tanaka, Takaya Ohno, Naoki Oyanagi, Shin Ichi Nishizawa, Takaya Suzuki, Kenji Fukuda, Tsutomu Yatsuo, Kazuo Arai

Keywords:

6H-SiC, Breakdown Voltage, Critical Electric Field, Mesa Structures, PN Diode

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] O. Korkina, J.P. Bergman, A. Henry, E. Janzén, S. Savage, J. André, L.P. Ramberg, U. Lindefelt, W. Hermansson and K. Bergman: Appl. Phys. Lett. Vol. 67 (1995) p.1561.

DOI: 10.1063/1.114734

Google Scholar

[2] D. Peters, R. Schörner, K. -H. Hölzlein and P. Friedrichs: Appl. Phys. Lett. Vol. 71 (1997) p.2996.

Google Scholar

[3] N.V. Dyakonova, P.A. Ivanov, V.A. Kozlov, M.E. Levinshtein, J.W. Palmour, S.L. Rumyantsev and R. Singh: IEEE Trans. Electron Devices Vol. 46 (1999) p.2188.

DOI: 10.1109/16.796295

Google Scholar

[4] Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour and T. Hayashi: Proc. 2001 International Symposium on Power Semiconductor Devices, Osaka, Japan, p.27 (2001).

Google Scholar

[5] V.E. Chelnokov, A.L. Syrkin and V.A. Dmitriev: Diamond and Related Materials Vol. 6 (1997) p.1480.

Google Scholar

[6] T. Kimoto, N. Miyamoto and H. Matsunami: IEEE Trans. Electron Devices Vol. 46(1999) p.471.

Google Scholar

[7] H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P.Å. Nilsson, J.P. Bergman and P. Skytt: Materials Science Forum Vol. 353-356 (2001) p.727.

DOI: 10.4028/www.scientific.net/msf.353-356.727

Google Scholar

[8] J.P. Bergman, H. Lendenmann, P.Å. Nilsson, U. Lindefelt and P. Skytt: Materials Science Forum Vol. 353-356 (2001) p.299.

DOI: 10.4028/www.scientific.net/msf.353-356.299

Google Scholar

[9] N. Oyanagi, H. Yamaguchi, T. Kato, S. Nishizawa and K. Arai: Materials Science Forum Vol. 389-393 (2002) p.87.

Google Scholar

[10] M. Bhatnagar and B.J. Baliga: IEEE Trans. Electron Devices Vol. 40 (1993) p.645.

Google Scholar

[11] J.A. Edmond, D.C. Waltz, S. Brueckner, H.S. Kong, J.W. Palmour and C.H. Carter Jr.: Trans. 1st Int. High Temp. Elec. Conf. p.207 (Albuquerque, NM, 1991).

Google Scholar

[12] J. Wang, B.W. Williams, S.E. Madathil and M.M. Desouza: Materials Science Forum Vol. 338-342 (2000) p.1359.

Google Scholar

[13] P.G. Neudeck and J.A. Powell: IEEE Electron Device Lett. Vol. 15 (1994) p.63.

Google Scholar

[14] P.G. Neudeck, W. Huang and M. Dudley: Solid-State Elctronics Vol. 42 (1998) p.2157.

Google Scholar

[15] Q. Wahab, A. Ellison, A. Henry, E. Janzén, C. Hallin, J.D. Persio and R. Martinez: Materials Science Forum Vol. 338-342 (2000) p.1175.

DOI: 10.4028/www.scientific.net/msf.338-342.1175

Google Scholar

[16] M. Skowronski, J.Q. Liu, W.M. Vetter, M. Dudley, C. Hallin and H. Lendenmann: J. Appl. Phys. Vol. 92 (2002).

Google Scholar

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