Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1009-1012

DOI:

10.4028/www.scientific.net/MSF.457-460.1009

Citation:

Y. Tanaka et al., "Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate", Materials Science Forum, Vols. 457-460, pp. 1009-1012, 2004

Online since:

June 2004

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