Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1009-1012

Citation:

Y. Tanaka et al., "Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate", Materials Science Forum, Vols. 457-460, pp. 1009-1012, 2004

Online since:

June 2004

Export:

Price:

$38.00

[1] O. Korkina, J.P. Bergman, A. Henry, E. Janzén, S. Savage, J. André, L.P. Ramberg, U. Lindefelt, W. Hermansson and K. Bergman: Appl. Phys. Lett. Vol. 67 (1995) p.1561.

DOI: https://doi.org/10.1063/1.114734

[2] D. Peters, R. Schörner, K. -H. Hölzlein and P. Friedrichs: Appl. Phys. Lett. Vol. 71 (1997) p.2996.

[3] N.V. Dyakonova, P.A. Ivanov, V.A. Kozlov, M.E. Levinshtein, J.W. Palmour, S.L. Rumyantsev and R. Singh: IEEE Trans. Electron Devices Vol. 46 (1999) p.2188.

DOI: https://doi.org/10.1109/16.796295

[4] Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour and T. Hayashi: Proc. 2001 International Symposium on Power Semiconductor Devices, Osaka, Japan, p.27 (2001).

[5] V.E. Chelnokov, A.L. Syrkin and V.A. Dmitriev: Diamond and Related Materials Vol. 6 (1997) p.1480.

[6] T. Kimoto, N. Miyamoto and H. Matsunami: IEEE Trans. Electron Devices Vol. 46(1999) p.471.

[7] H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P.Å. Nilsson, J.P. Bergman and P. Skytt: Materials Science Forum Vol. 353-356 (2001) p.727.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.727

[8] J.P. Bergman, H. Lendenmann, P.Å. Nilsson, U. Lindefelt and P. Skytt: Materials Science Forum Vol. 353-356 (2001) p.299.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.299

[9] N. Oyanagi, H. Yamaguchi, T. Kato, S. Nishizawa and K. Arai: Materials Science Forum Vol. 389-393 (2002) p.87.

[10] M. Bhatnagar and B.J. Baliga: IEEE Trans. Electron Devices Vol. 40 (1993) p.645.

[11] J.A. Edmond, D.C. Waltz, S. Brueckner, H.S. Kong, J.W. Palmour and C.H. Carter Jr.: Trans. 1st Int. High Temp. Elec. Conf. p.207 (Albuquerque, NM, 1991).

[12] J. Wang, B.W. Williams, S.E. Madathil and M.M. Desouza: Materials Science Forum Vol. 338-342 (2000) p.1359.

[13] P.G. Neudeck and J.A. Powell: IEEE Electron Device Lett. Vol. 15 (1994) p.63.

[14] P.G. Neudeck, W. Huang and M. Dudley: Solid-State Elctronics Vol. 42 (1998) p.2157.

[15] Q. Wahab, A. Ellison, A. Henry, E. Janzén, C. Hallin, J.D. Persio and R. Martinez: Materials Science Forum Vol. 338-342 (2000) p.1175.

[16] M. Skowronski, J.Q. Liu, W.M. Vetter, M. Dudley, C. Hallin and H. Lendenmann: J. Appl. Phys. Vol. 92 (2002).

Fetching data from Crossref.
This may take some time to load.