Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments

Dae Hwan Kim; Hoon Joo Na; Sang Yong Jung; In Bok Song; Myung Yoon Um; Ho Keun  Song; Jae Kyeong Jeong; Jae Bin Lee; Hyeong Joon Kim

doi:10.4028/www.scientific.net/MSF.457-460.1001

Paper Titles

4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues
p.985

Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
p.989

Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements
p.993

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
p.997

Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
p.1001

P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching
p.1005

Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
p.1009

Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring
p.1013

Current Transport Mechanisms in 4H-SiC PiN Diodes
p.1017

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Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments

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Materials Science Forum (Volumes 457-460)

Pages:

1001-1004

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1001

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Online since:

June 2004

Authors:

Dae Hwan Kim, Hoon Joo Na, Sang Yong Jung, In Bok Song, Myung Yoon Um, Ho Keun Song, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim

Keywords:

Interface States (or Traps), Leakage Current

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