Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1001-1004

DOI:

10.4028/www.scientific.net/MSF.457-460.1001

Citation:

D. H. Kim et al., "Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments", Materials Science Forum, Vols. 457-460, pp. 1001-1004, 2004

Online since:

June 2004

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$35.00

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