Paper Titles

First Principles Derivation of Carrier Transport across Metal - SiC Barriers
p.969

Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics
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Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon Carbide
p.977

Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology
p.981

4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues
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Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
p.989

Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements
p.993

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
p.997

Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-4604H-SiC Power Schottky Diodes. On the Way to Solve...

4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

985-988

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.985

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Online since:

June 2004

Authors:

Alexander Syrkin, Vladimir Dmitriev, V. Soukhoveev, Marina G. Mynbaeva, Roumen Kakanakov, Christer Hallin, Erik Janzén

Keywords:

Micropipe Filling, Power Schottky Diodes, Screw Dislocations

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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