Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

989-992

DOI:

10.4028/www.scientific.net/MSF.457-460.989

Citation:

K. Vassilevski et al., "Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation", Materials Science Forum, Vols. 457-460, pp. 989-992, 2004

Online since:

June 2004

Export:

Price:

$35.00

In order to see related information, you need to Login.