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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Edge Termination of SiC Schottky Diodes with Guard...

Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

989-992

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.989

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Online since:

June 2004

Authors:

Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright

Keywords:

Boron, Edge Termination, Guard Rings, Ion Implantation, Schottky Diode

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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