Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

989-992

Citation:

K. Vassilevski et al., "Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation", Materials Science Forum, Vols. 457-460, pp. 989-992, 2004

Online since:

June 2004

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$38.00

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