Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

993-996

DOI:

10.4028/www.scientific.net/MSF.457-460.993

Citation:

F. Moscatelli et al., "Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements", Materials Science Forum, Vols. 457-460, pp. 993-996, 2004

Online since:

June 2004

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