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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Extraction of the Schottky Barrier Height for...

Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

993-996

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.993

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Online since:

June 2004

Authors:

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, G.C. Cardinali, Roberta Nipoti

Keywords:

Ohmic Contact, Schottky Barrier, Silicon Carbide (SiC), Temperature Dependence, Ti/Al

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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