Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

981-984

DOI:

10.4028/www.scientific.net/MSF.457-460.981

Citation:

M. Treu et al., "Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology", Materials Science Forum, Vols. 457-460, pp. 981-984, 2004

Online since:

June 2004

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$38.00

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