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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Challenges and First Results of SiC Schottky Diode...

Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

981-984

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.981

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Online since:

June 2004

Authors:

Michael Treu, Roland Rupp, Helmut Brunner, Fanny Dahlquist, Christian Hecht

Keywords:

3 Inch, Defect Density, Epitaxy, Manufacturing, Schottky Diode, Surface Roughness (SR)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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