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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460SiC Devices for High Voltage High Power...

SiC Devices for High Voltage High Power Applications

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

963-968

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.963

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Online since:

June 2004

Authors:

Yoshitaka Sugawara

Keywords:

GTO, Insulated Gate Bipolar Transistor (IGBT), Inverter, JGBT, Module, PN Diode, RonS, SICGT, SIJFET, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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