High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

957-962

DOI:

10.4028/www.scientific.net/MSF.457-460.957

Citation:

J. H. Zhao et al., "High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications", Materials Science Forum, Vols. 457-460, pp. 957-962, 2004

Online since:

June 2004

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