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Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
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Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation
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Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC
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Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap
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Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature
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Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction
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SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature
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SiC-Based Current Limiter Devices
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High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Contribution of X-Ray Diffraction Simulations to...

Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

937-940

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.937

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Online since:

June 2004

Authors:

Alain Declémy, A.A. Shiryaev, S. Stepanov, Jean François Barbot, Marie France Beaufort, Erwan Oliviero, E. Ntsoenzok, Thierry Sauvage

Keywords:

Dynamical Diffraction Theory, Ion Implantation, Silicon Carbide (SiC), X-Ray Diffraction (XRD)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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