Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

937-940

DOI:

10.4028/www.scientific.net/MSF.457-460.937

Citation:

A. Declémy et al., "Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature", Materials Science Forum, Vols. 457-460, pp. 937-940, 2004

Online since:

June 2004

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