Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

933-936

DOI:

10.4028/www.scientific.net/MSF.457-460.933

Citation:

Y. Negoro et al., "Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap", Materials Science Forum, Vols. 457-460, pp. 933-936, 2004

Online since:

June 2004

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