Paper Titles

Annealing Process of N⁺-/P⁺-Ions Coimplanted along with Si⁺-, C⁺- or Ne⁺-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
p.909

Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face
p.913

Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC
p.917

Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
p.921

Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation
p.925

Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC
p.929

Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap
p.933

Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature
p.937

Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction
p.941

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Reactive Ion Etching of Silicon Carbide with...

Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

925-928

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.925

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Online since:

June 2004

Authors:

Konstantin Vassilevski, J. Hedley, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright

Keywords:

Boron Implantation, Etch Rate, Reactive Ion Etching, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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