SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

945-950

DOI:

10.4028/www.scientific.net/MSF.457-460.945

Citation:

A. Poggi et al., "SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature", Materials Science Forum, Vols. 457-460, pp. 945-950, 2004

Online since:

June 2004

Export:

Price:

$38.00

In order to see related information, you need to Login.