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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460SiC Donor Doping by 300°C P Implantation:...

SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

945-950

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.945

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Online since:

June 2004

Authors:

Antonella Poggi, Roberta Nipoti, Francesco Moscatelli, G.C. Cardinali, Mariaconcetta Canino

Keywords:

Annealing Temperature, Diode Performance, Doping Activation, P Low Temperature Implantation, Surface Damage

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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