Paper Titles

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
p.997

Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
p.1001

P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching
p.1005

Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
p.1009

Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring
p.1013

Current Transport Mechanisms in 4H-SiC PiN Diodes
p.1017

On-Chip Temperature Monitoring of a SiC Current Limiter
p.1021

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
p.1025

Low Voltage Silicon Carbide Zener Diode
p.1029

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Fabrication and Characterization of 4H-SiC pn...

Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1013-1016

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1013

Citation:

Cite this paper

Online since:

June 2004

Authors:

Wook Bahng, Geun Ho Song, Hyoung Wook Kim, K.S. Seo, Nam Kyun Kim

Keywords:

Breakdown Voltage, Diffusion, Edge Termination, FLR, On-Resistance, PN Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] B. J. Baliga, Modern Power Devices (John Wiley & Sons, 1987), Chap. 3.

[2] H. Onose, S. Oikawa, T. Yatsuo and Yutaka, Proc. ISPSD2000, Toulouse, 245.

[3] H. W. Kim, W. Bahng, G. H. Song, S. C. Kim, N. K. Kim and E. D. Kim, in this proceeding.

[4] Y. Negoro, N. Miyamoto, T. Kimoto and H. Matsunami, IEEE Trans. Electron Device, 49 (2002), p.1505.

[5] M. A. Capano, S. Ryu, J. A. Cooper, Jr., M. R. Melloch, K. Rottner, S. Karlsson, N. Nordell, A. Powell and D. E. Walker, Jr., J. Electron. Mater., 28 (1999), p.214.

DOI: 10.1007/s11664-999-0016-z