Materials Science Forum Vols. 457-460

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https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Authors: Pierre Brosselard, Volker Zorngiebel, Dominique Planson, Sigo Scharnholz, Jean-Pierre Chante, Emil Spahn, Christophe Raynaud, Mihai Lazar

1129

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Authors: Anatoly M. Strel'chuk, Alexander A. Lebedev, D.V. Davydov, N.S. Savkina, Alexey N. Kuznetsov, M. Valakh, V.S. Kiselev, B.N. Romanyuk, Christophe Raynaud, Jean-Pierre Chante, Marie Laure Locatelli

1133

The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications

Authors: Jian Hui Zhao, Jian Hui Zhang, Yan Bin Luo, X. Hu, Yu Zhu Li, H. Yu, J. Lai, Peter Alexandrov, Leonid Fursin, Larry X. Li, J. Carter, M. Weiner

1137

SiC BJT Technology for Power Switching and RF Applications

Authors: Anant K. Agarwal, Sei Hyung Ryu, Craig Capell, Jim Richmond, John W. Palmour, Howard Bartlow, T. Paul Chow, Skip Scozzie, W. Tipton, Stephen Baynes, Kenneth A. Jones

1141

Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs

Authors: Pavel A. Ivanov, Michael E. Levinshtein, Anant K. Agarwal, John W. Palmour, Sei Hyung Ryu

1145

High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors

Authors: Jian Hui Zhang, Peter Alexandrov, Jian Hui Zhao

1149

Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits

Authors: Michael S. Mazzola, Jeff B. Casady, Neil Merrett, Igor Sankin, W.A. Draper, D. Seale, V. Bondarenko, Yaroslav Koshka, J. Gafford, R. Kelly

1153

1,530V, 17.5mΩcm² Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization

Authors: Leonid Fursin, Larry X. Li, Jian Hui Zhao