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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

High Frequency Measurements and Simulations of SiC MESFETs up to 250°C

Authors: W. Liu, Carl Mikael Zetterling, Mikael Östling, Joakim Eriksson, Niklas Rorsman, Herbert Zirath

1209

6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs

Authors: Jian Hui Zhao, Kiyoshi Tone, Larry X. Li, Peter Alexandrov, Leonid Fursin, M. Weiner

1213

A 600V Deep-Implanted Gate Vertical JFET

Authors: Makoto Mizukami, Osamu Takikawa, M. Murooka, Seiji Imai, Kozo Kinoshita, Tetsuo Hatakeyama, M. Tsukuda, W. Saito, I. Omura, Takashi Shinohe

1217

Single Contact-Material MESFETs on 4H-SiC

Authors: Satoshi Tanimoto, Masaki Inada, Norihiko Kiritani, Masakatsu Hoshi, Hideyo Okushi, Kazuo Arai

1221

DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors

Authors: Rolf Jonsson, Qamar-ul Wahab, Staffan Rudner

1225

Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications

Authors: Niklas Rorsman, Per Åke Nilsson, Joakim Eriksson, Kristoffer Andersson, Herbert Zirath

1229

The Theoretical Study on Total Power Dissipation of SiC Devices in Comparison with Si Devices

Authors: Kazuhiro Adachi, Hiromichi Ohashi, Kazuo Arai

1233

Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC

Authors: A. Martinez, M. Hjelm, H.-E. Nilsson, Ulf Lindefelt

1237

Edge Termination Technique for SiC Power Devices

Authors: Hyoung Wook Kim, Wook Bahng, Geun Ho Song, Sang Cheol Kim, Nam Kyun Kim, Eun Dong Kim

1241

BIFET – a Novel Bipolar SiC Switch for High Voltage Power Electronics

Authors: Heinz Mitlehner, Peter Friedrichs, Rudolf Elpelt, Karl Otto Dohnke, Reinhold Schörner, Dietrich Stephani

1245