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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

A Review of SiC Power Switch: Achievements, Difficulties and Perspectives

Authors: Igor Sankin, J. Neil Merrett, W.A. Draper, Janna R. B. Casady, Jeff B. Casady

1249

A Highly Effective Edge Termination Design for SiC Planar High Power Devices

Authors: R. Pérez, Narcis Mestres, Servane Blanqué, Dominique Tournier, Xavier Jordá, Philippe Godignon, Roberta Nipoti

1253

Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC

Authors: X. Wang, James A. Cooper

1257

The SiC-SiO₂ Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material

Authors: Sima Dimitrijev

1263

A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

Authors: Junji Senzaki, M. Goto, Kazutoshi Kojima, Kikuo Yamabe, Kenji Fukuda

1269

Recent Advances in (0001) 4H-SiC MOS Device Technology

Authors: Mrinal K. Das

1275

Characterizations of SiC/SiO₂ Interface Quality Toward High Power MOSFETs Realization

Authors: D. Ziane, Jean Marie Bluet, Gérard Guillot, Philippe Godignon, Josep Montserrat, R.R Ciechonski, Mikael Syväjärvi, Rositza Yakimova, L. Chen, Philip Andrew Mawby

1281

Hall Effect Measurements in SiC Buried-Channel MOS Devices

Authors: N.S. Saks, Sei Hyung Ryu

1287

First-Principles Study of O Adsorption at SiC Surface

Authors: Riccardo Rurali, E. Wachowicz, P. Ordejón, Philippe Godignon, Jose Rebollo, P. Hyldgaard

1293

Interface States in Abrupt SiO₂/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters

Authors: Toshiharu Ohnuma, Hidekazu Tsuchida, Tamotsu Jikimoto

1297