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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect

Authors: Michael Laube, Gerhard Pensl, Kin Kiong Lee, Takeshi Ohshima

1381

Development of 10 kV 4H-SiC Power DMOSFETs

Authors: Sei Hyung Ryu, Anant K. Agarwal, Sumi Krishnaswami, Jim Richmond, John W. Palmour

1385

Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFET

Authors: E. Hanna, H.R. Chang, A.V. Radun, Q. Zhang, M. Gomez

1389

Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiC

Authors: M. Matin, Asmita Saha, James A. Cooper

1393

Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing

Authors: Ryouji Kosugi, Norihiko Kiritani, Kenji Suzuki, Tsutomu Yatsuo, Kazuhiro Adachi, Kenji Fukuda

1397

A P-Channel MOSFET on 4H-SiC

Authors: Ji Sheng Han, K.Y. Cheong, Sima Dimitrijev, Michael Laube, Gerhard Pensl

1401

Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC

Authors: Takeshi Ohshima, Kin Kiong Lee, Yuuki Ishida, Yasunori Tanaka, Kazutoshi Kojima, Tetsuo Takahashi, Masahito Yoshikawa, Hajime Okumura, Kazuo Arai, Toshio Kamiya

1405

4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)

Authors: J. Kaido, Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami

1409

930, 170Ω.cm² Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing

Authors: W. Wang, S. Banerjee, T. Paul Chow, Ronald J. Gutmann

1413

4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs

Authors: Kenji Fukuda, Makoto Kato, Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki

1417