Volumes

Materials Science Forum
Vols. 475-479

Materials Science Forum
Vols. 473-474

Materials Science Forum
Vols. 471-472

Materials Science Forum
Vols. 467-470

Materials Science Forum
Vols. 465-466

Materials Science Forum
Vols. 461-464

Materials Science Forum
Vols. 457-460

Materials Science Forum
Vols. 455-456

Materials Science Forum
Vols. 453-454

Materials Science Forum
Vols. 449-452

Materials Science Forum
Vols. 447-448

Materials Science Forum
Vols. 445-446

Materials Science Forum
Vols. 443-444

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

Export:

ToC:

Table of Contents

Paper Title Page

Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Authors: Shinsuke Harada, Mitsuo Okamoto, Tsutomu Yatsuo, Kazuhiro Adachi, Kenji Suzuki, Seiji Suzuki, Kenji Fukuda, Kazuo Arai

1421

Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N₂O)

Authors: G. Gudjónsson, H.Ö. Ólafsson, E.Ö. Sveinbjörnsson

1425

High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N₂O Ambient

Authors: Y. Kanzaki, H. Kinbara, Hajime Kosugi, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami

1429

Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs

Authors: Nicolas G. Wright, N. Poolamai, Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson

1433

Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K

Authors: Hyung Seok Lee, Sang-Mo Koo, Carl Mikael Zetterling, Erik Danielsson, Martin Domeij, Mikael Östling

1437

Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs

Authors: S.J. Rashid, Andrej Mihaila, F. Udrea, Rajesh Kumar Malhan, G. Amaratunga

1441

SiC JMOSFETs for High-Temperature Stable Circuit Operation

Authors: Sang-Mo Koo, Carl Mikael Zetterling, Hyung Seok Lee, Mikael Östling

1445

Advanced Processing Techniques for Silicon Carbide MEMS and NEMS

Authors: Christian A. Zorman, Mehran Mehregany

1451

Microscopic Structure and Electrical Activity of 4H-SiC/SiO₂ Interface Defects : an EPR Study of Oxidized Porous SiC

Authors: Hans Jürgen von Bardeleben, J.L. Cantin, Y. Shishkin, Robert P. Devaty, Wolfgang J. Choyke

1457

Porous Silicon Carbide as a Membrane for Implantable Biosensors

Authors: A.J. Rosenbloom, Y. Shishkin, D.M. Sipe, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke

1463