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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Paper Title Page

X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH₃

Authors: L. YingShen, S. Hashimoto, Koji Abe, R. Hayashibe, Takanobu Yamagami, Masato Nakao, Kiichi Kamimura

1549

Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates

Authors: Xu-Qiang Shen, Hajime Okumura

1553

Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE

Authors: N. Gogneau, F. Fossard, Eva Monroy, Sylvain Monnoye, Hugues Mank, B. Daudin

1557

Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers

Authors: S. Founta, N. Gogneau, Eugénie Martinez, Gabriel Ferro, Yves Monteil, B. Daudin, H. Mariette

1561

In-Situ Monitoring of AlN Crystal Growth on 6H-SiC by the Use of a Pyrometer

Authors: Takaya Suzuki, T. Inushima

1565

Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy

Authors: Norio Onojima, J. Kaido, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami

1569

Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE

Authors: Eva Monroy, E. Sarigiannidou, F. Fossard, E. Enjalbert, N. Gogneau, E. Bellet-Amalric, J. Brault, J.-L. Rouvière, Le Si Dang, Sylvain Monnoye, Hugues Mank, B. Daudin

1573

Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

Authors: F. Fossard, J. Brault, N. Gogneau, Eva Monroy, F. Enjalbert, Le Si Dang, E. Bellet-Amalric, Sylvain Monnoye, B. Daudin, Hugues Mank

1577

GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

Authors: J. Napierala, D.M. Martin, H.-J. Bühlmann, S. Gradecak, M. Ilegems

1581

Growth and Field Emission of GaN Nanowires

Authors: T.Y. Kim, Seung Hyun Lee, Y.H. Mo, Kee Suk Nahm

1585

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