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Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

ToC:

Table of Contents

Paper Title Page

High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire
Authors: V. Desmaris, Joakim Eriksson, Niklas Rorsman, Herbert Zirath
1629
Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
Authors: Kevin Matocha, T. Paul Chow, Ronald J. Gutmann
1633

Showing 391 to 392 of 392 Paper Titles

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