High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire

V. Desmaris; Joakim Eriksson; Niklas Rorsman; Herbert Zirath

doi:10.4028/www.scientific.net/MSF.457-460.1629

Paper Titles

X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC
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Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers
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Radiotracer Spectroscopy on Group II Acceptors in GaN
p.1609

Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
p.1613

An Ab Initio Study of Intrinsic Stacking Faults in GaN
p.1617

AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart Cut^TM Technology
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Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements
p.1625

High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire
p.1629

Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
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High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1629-1632

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1629

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Online since:

June 2004

Authors:

V. Desmaris, Joakim Eriksson, Niklas Rorsman, Herbert Zirath

Keywords:

AlGaN, Gallium Nitride (GaN), HEMT, HFET, Power

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