High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1629-1632

DOI:

10.4028/www.scientific.net/MSF.457-460.1629

Citation:

V. Desmaris et al., "High CW Power 0.3 μm Gate AlGaN/GaN HEMTs Grown by MBE on Sapphire", Materials Science Forum, Vols. 457-460, pp. 1629-1632, 2004

Online since:

June 2004

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$35.00

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