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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Self-Aligned N+ Polysilicon-Gate GaN MOSFETs

Self-Aligned N+ Polysilicon-Gate GaN MOSFETs

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1633-0

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1633

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Online since:

June 2004

Authors:

Kevin Matocha, T. Paul Chow, Ronald J. Gutmann

Keywords:

Gallium Nitride (GaN), Ion Implantation, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Self-Aligned

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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