Self-Aligned N+ Polysilicon-Gate GaN MOSFETs

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1633-0

Citation:

K. Matocha et al., "Self-Aligned N+ Polysilicon-Gate GaN MOSFETs", Materials Science Forum, Vols. 457-460, pp. 1633-0, 2004

Online since:

June 2004

Export:

Price:

$38.00